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BU180 - Silicon NPN Darlington Power Transistor

Description

Collector Current -IC= 10A DC Current Gain- : hFE= 200(Min)@ IC= 5A Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated switchmode applications such as: Switching reg

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·DC Current Gain- : hFE= 200(Min)@ IC= 5A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 320 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BU180 isc website：www.iscsemi.
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