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ID9S6015D
600V Half Bridge Gate Drive IC
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General Description
The ID9S6015D is a wafer level production, which is a single phase high voltage power MOSFET and IGBT gate driver optimized to drive the gates of both high-side and low-side power transistors. The floating channel driver design can accommodate BUS voltages as high as 600 V. With a wide operation voltage range, high or low side gate drive voltage can be optimized for the best efficiency. Internal non-overlap circuitry further reduces switching losses by preventing simultaneous conduction of both transistors. The Under Voltage Lockout (UVLO) function ensures that both driver outputs are low when the supply voltage is low.