IMD256M16R30HG8GNF-107
Features
DDR3 SDRAM
(TBD)1024M4
- 128 Meg x 4 x 8 Banks (TBD)512M8
- 64 Meg x 8 x 8 Banks (IMD256M16R30HG8GNF-125/107)256M16
- 32 Meg x 16 x 8Banks
Features
Options
- VDD = VDDQ = +1.5V ±0.075V
- 1.5V center-terminated push/pull I/O
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Posted CAS Addictive latency (AL)
- Programmable CAS (WRITE) latency (CWL) based on t CK
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode
- TC of 0°C to 85°C
- 64ms, 8,192 cycle refresh at 0°C to 85°C
- 32ms, 8,192 cycle refresh at 85°C to 95°C
- Self refresh temperature (SRT)
- Write leveling
- Multipurpose register
- Output driver calibration
- ICMAX Memory
- Configuration
- 1 Gig x 4
- 512...
