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Preliminary
Features
IBM0418A81BLAB IBM0436A81BLAB IBM0418A41BLAB IBM0436A41BLAB 8Mb (256Kx36 & 512x18) and 4Mb (128Kx36 & 256Kx18) SRAM
• 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology • Synchronous Pipeline Mode of Operation with Self-Timed Late Write • Single Differential HSTL Clock • +2.5V Power Supply, Ground, 1.5, 1.8V VDDQ, and 0.90V VREF • HSTL Input and Output levels • Registered Addresses, Write Enables, Synchronous Select, and Data Ins
• Registered Outputs • Common I/O • Asynchronous Output Enable • Synchronous Power Down Input • Boundary Scan using limited set of JTAG 1149.