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HY6264A - Ic-64k CMOS SRAM

Description

The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology.

This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns.

Features

  • Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) -2.0V(min. ) data retention.
  • Standard pin configuration -28 pin 600 mil PDIP -28 pin 330 mil SOP Product Voltage Speed No. (V) (ns) HY6264A 5.0 70/85/100 Note 1. Current value is max. Operation Current(mA) 50 Standby Current(uA) L LL 1mA 100 10 Temperature (°C) 0~70(Normal) PIN.

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Datasheet Details

Part number HY6264A
Manufacturer Hyundai
File Size 130.82 KB
Description Ic-64k CMOS SRAM
Datasheet download datasheet HY6264A Datasheet

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Full PDF Text Transcription

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HY6264A Series 8Kx8bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns. The HY6264A has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltage from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. Reducing the supply voltage to minimize current drain is unnecessary for the HY6264A Series.
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