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HMP164S6EFR6C-Y5 - 200pin Unbuffered DDR2 SDRAM SO-DIMMs

Download the HMP164S6EFR6C-Y5 datasheet PDF. This datasheet also covers the HMP164S6EFR6C-C4 variant, as both devices belong to the same 200pin unbuffered ddr2 sdram so-dimms family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • JEDEC standard Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply.
  • All inputs and outputs are compatible with SSTL_1.8 interface.
  • Posted CAS Programmable CAS Latency 3,4,5, and 6 OCD (Off-Chip Driver Impedance Adjustment) and ODT (On-Die Termination).
  • Fully differential clock operations (CK & CK).
  • Programmable Burst Length 4 / 8 with both sequential and interl.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMP164S6EFR6C-C4_Hynix.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 1Gb version E This Hynix unbuffered Small Outline Dual In-Line Memory Module (DIMM) series consists of 1Gb version E DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 1Gb version E based Unbuffered DDR2 SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is suitable for easy interchange and addition. FEATURES • JEDEC standard Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply • All inputs and outputs are compatible with SSTL_1.
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