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H9DP32A4JJBCGR - 4GB eNAND Flash(x8) + 4Gb Mobile DDR

Datasheet Summary

Description

and is subject to change without notice.

for use of circuits described.

No patent licenses are implied.

Features

  • [ CI-MCP ].
  • Operation Temperature - (-25)oC ~ 85oC.
  • Package - 153-ball FBGA - 11.5x13.0mm2, 1.0t, 0.5mm pitch - Lead & Halogen Free [ e-NAND ] [ DDR SDRAM ].
  • Packaged NAND flash memory with MultiMediaCard interface.
  • e-NAND system specification, compliant with V4.41.
  • Full backward compatibility with previous eNAND system specification.
  • Bus mode - High-speed eMMC protocol. - Three different data bus widths: 1 bit, 4 bits,8 bits. - Data transfer rate: up to 104Mbyt.

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Datasheet Details

Part number H9DP32A4JJBCGR
Manufacturer Hynix
File Size 2.21 MB
Description 4GB eNAND Flash(x8) + 4Gb Mobile DDR
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CI-MCP Specification 4GB eNAND Flash(x8) + 4Gb Mobile DDR (x32) This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.1 / Nov. 2012 1 Preliminary H9DP32A4JJBCGR eNAND 4GB(x8) / Mobile DDR 4Gb(x32, 2CS) Document Title CI-MCP 4GB(x8) eNAND Flash / 4Gb (x32) Mobile DDR Revision History Revision No. History 0.1 - Initial Draft 0.2 - Updated DC and AC CHARACTERISTICS Draft Date Nov. 2012 Nov. 2012 Remark Preliminary Preliminary Rev 0.1 / Nov. 2012 2 Preliminary H9DP32A4JJBCGR eNAND 4GB(x8) / Mobile DDR 4Gb(x32, 2CS) FEATURES [ CI-MCP ] ● Operation Temperature - (-25)oC ~ 85oC ● Package - 153-ball FBGA - 11.5x13.0mm2, 1.0t, 0.
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