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HYMD116645BL8-K - Unbuffered DDR SDRAM DIMM

Download the HYMD116645BL8-K datasheet PDF. This datasheet also covers the HYMD116645B8-H variant, as both devices belong to the same unbuffered ddr sdram dimm family and are provided as variant models within a single manufacturer datasheet.

Description

Hynix HYMD116645B(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 16Mx64 high-speed memory arrays.

Features

  • 128MB (16M x 64) Unbuffered DDR DIMM based on 16Mx8 DDR SDRAM JEDEC Standard 184-pin dual in-line memory module (DIMM) 2.5V +/- 0.2V VDD and VDDQ Power supply All inputs and outputs are compatible with SSTL_2 interface Fully differential clock operations (CK & /CK) with 100MHz/125MHz/133MHz All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock Data(DQ), Data strobes and Write.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYMD116645B8-H_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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16Mx64 bits Unbuffered DDR SDRAM DIMM HYMD116645B(L)8-M/K/H/L DESCRIPTION Hynix HYMD116645B(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 16Mx64 high-speed memory arrays. Hynix HYMD116645B(L)8-M/K/ H/L series consists of eight 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD11664B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD116645B(L)8-M/K/H/L series is designed for high speed of up to 133MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs.
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