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HY62SF16406E - 256Kx16bit full CMOS SRAM

Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup -. 1.2V(min) data retention.
  • Standard pin configuration -. 48-ball FBGA Product No. Voltage (V) Speed (ns) 70 Operation Current/Icc(mA) 1.0 HY62SF16406E-I 1.65~2.3 Note 1. I : Industrial 2. Current value is max. Standby Current(uA) SL LL 6 10 Temperature (°C) -40~85 PIN.

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www.DataSheet4U.com HY62SF16406E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 00 01 02 History Initial Draft Package Height Changed 1.0mm -> 0.9mm ISB1 Changed 6uA -> 10uA VOH Changed 1.6V -> 1.4V Icc Changed 0.5mA -> 1.0mA Draft Date Dec.20.2001 Mar.05.2002 May.17.2002 Remark Preliminary Preliminary Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 / May.02 Hynix Semiconductor HY62SF16406E Series DESCRIPTION The HY62SF16406E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits.
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