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HY62CT08081E-DTE - 32Kx8bit CMOS SRAM

Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup - 2.0V(min. ) data retention.
  • Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL 10 20 20 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Industrial) Product Voltage No. (V) HY62CT08081E-C 5.0 HY62CT08081E-E 5.0 HY62CT08081E-I 5.0 Note 1. Current value.

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Part Number Description
HY62CT08081E-DTC 32Kx8bit CMOS SRAM
HY62CT08081E-DTI 32Kx8bit CMOS SRAM
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HY62CT08081E-DGI 32Kx8bit CMOS SRAM

Full PDF Text Transcription

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HY62CT08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power Slow SRAM Revision History Revision No 00 01 History Initial Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load Revised - Remove L-Part - Change LL-Part Isb1 Limit @E.T/I.T : 15uA => 20uA Revised - Marking Information Change : SOP Type Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Nov.01.2000 Dec.05.2000 Remark Preliminary Preliminary 02 Feb.13.2001 Final 03 Feb.21.2001 Final 04 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 04 / Apr.
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