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HY628100A - 128Kx8bit CMOS SRAM

Description

The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit.

The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology.

Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup(L/LL-part) - 2.0V(min) data retention.
  • Standard pin configuration - 32pin 525mil SOP - 32pin 8x20mm TSOP-I(Standard) Standby Current(uA) L LL 1mA 100 20 Temperature (°C) 0~70 PIN.

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HY628100A Series 128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V. Product Voltage Speed Operation No (V) (ns) Current(mA) HY628100A 5.0 55/70/85 10 Comment : 50ns is available with 30pF test load. FEATURES • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(L/LL-part) - 2.
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