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HY5V52FP - 4Banks x 2M x 32bits Synchronous DRAM

Download the HY5V52FP datasheet PDF. This datasheet also covers the HY5V52F variant, as both devices belong to the same 4banks x 2m x 32bits synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Voltage : VDD, VDDQ 3.3V All device pins are compatible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM0,1,2 and 3.
  • Internal four banks operation.
  • Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks.
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5V52F_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY5V52FP
Manufacturer SK Hynix
File Size 345.39 KB
Description 4Banks x 2M x 32bits Synchronous DRAM
Datasheet download datasheet HY5V52FP Datasheet

Full PDF Text Transcription

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www.DataSheet4U.com Preliminary HY5V52(L)F(P) Series 4Banks x 2M x 32bits Synchronous DRAM Document Title 4Bank x 2M x 32bits Synchronous DRAM Revision History Revision No. 0.1 History Initial Draft Draft Date Jun. 2004 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / June. 2004 1 Preliminary HY5V52(L)F(P) Series 4Banks x 2M x 32bits Synchronous DRAM DESCRIPTION The Hynix HY5V52(L)F(P) series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52(L)F(P) is organized as 4banks of 2,097,152x32.
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