Datasheet4U Logo Datasheet4U.com

HY5DU561822ELTP - (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

Download the HY5DU561822ELTP datasheet PDF. This datasheet also covers the HY5DU56822E variant, as both devices belong to the same (hy5du56822e / hy5du561622e) 256mb ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5DU56822E_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY5DU561822ELTP
Manufacturer SK Hynix
File Size 292.14 KB
Description (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM
Datasheet download datasheet HY5DU561822ELTP Datasheet

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com 256Mb DDR SDRAM HY5DU56822E(L)TP HY5DU561622E(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 /June. 2006 1 www.DataSheet4U.com HY5DU56822E(L)TP HY5DU561622E(L)TP 1 Revision History Revision No. 1.0 1.1 First release Added CL2 & CL2.5 values to the DDR400B in the AC CHARACTERISTICS History Draft Date Apr. 2006 June 2006 Remark Rev. 1.1 /June. 2006 2 www.DataSheet4U.
Published: |