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HY5DU28822T - 2nd 128M DDR SDRAM

Download the HY5DU28822T datasheet PDF. This datasheet also covers the HY5DU28422T variant, as both devices belong to the same 2nd 128m ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

1.

128M DDR SDRAM Brief Information --------------------------------------------------------------------- 3 1.1 Description 1.2 Feature 1.3 Ordering Information 2.

Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL ali.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5DU28422T-HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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HY5DU28422T HY5DU28822T HY5DU281622T 2nd 128M DDR SDRAM HY5DU28422T HY5DU28822T HY5DU281622T Revision 1.3 April 2001 Rev. 1.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 128Mb (x4, x8, x16) Double Data Rate SDRAM HY5DU28422T HY5DU28822T HY5DU281622T CONTENTS 1. 128M DDR SDRAM Brief Information --------------------------------------------------------------------- 3 1.1 Description 1.2 Feature 1.3 Ordering Information 2. Pin 2.1 2.2 2.3 & PKG Information --------------------------------------------------------------------------------------- 4 Pin Configuration Pin Description PKG Physical Dimension 3. Functional Block Diagram ----------------------------------------------------------------------------------- 7 4.
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