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HY5DU12822DLTP - 512Mb DDR SDRAM

Download the HY5DU12822DLTP datasheet PDF. This datasheet also covers the HY5DU121622DTP variant, as both devices belong to the same 512mb ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333) VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400 product ) All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY5DU121622DTP_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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512Mb DDR SDRAM HY5DU12822D(L)TP HY5DU121622D(L)TP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan 2007 1 www.DataSheet.in 1Preliminary HY5DU12822DTP HY5DU121622DTP Revision History Revision No. 0.1 History First version for internal review Draft Date Jan. 2007 Remark Rev. 0.1 / Jan 2007 2 www.DataSheet.in 1Preliminary HY5DU12822DTP HY5DU121622DTP DESCRIPTION The HY5DU12822DT(P) and HY5DU121622DT(P) are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
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