Datasheet4U Logo Datasheet4U.com

HY57V161610FTP-7I - 16Mb Synchronous DRAM

Download the HY57V161610FTP-7I datasheet PDF. This datasheet also covers the HY57V161610FT-xx variant, as both devices belong to the same 16mb synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal two banks operation.
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY57V161610FT-xx_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
HY57V28420BLT 4Banks x 8M x 4bits Synchronous DRAM Hynix
HY57V28420BT 4Banks x 8M x 4bits Synchronous DRAM Hynix
HY57V561620BLT-H DRAM Pioneer
HY57V641620FTP Synchronous DRAM Memory 64Mbit Hynix
HY57V641620LTP Synchronous DRAM Memory 64Mbit Hynix

Other Datasheets by SK Hynix

Part Number Description
HY57V161610FTP-7 16Mb Synchronous DRAM
HY57V161610FTP-5 16Mb Synchronous DRAM
HY57V161610FTP-5I 16Mb Synchronous DRAM
HY57V161610FTP-6 16Mb Synchronous DRAM
HY57V161610FTP-6I 16Mb Synchronous DRAM

Full PDF Text Transcription

Click to expand full text
16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 History Initial Draft Final Revision Draft Date Feb. 2006 Apr. 2006 Remark Preliminary www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Apr. 2006 1 Synchronous DRAM Memory 16Mbit (1Mx16bit) HY57V161610FT(P)-xx(I) Series 11 DESCRIPTION THE Hynix HY57V161610F-Series is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth.
Published: |