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HY57V161610D
2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M
DESCRIPTION
THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
HY57V161610D Datasheet
