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HY531000A - 1M X 1 Fast Page Mode

Description

This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs.

Fast Page mode offers high speed of random access memory within the same row.

The circuit and process design allow this device to achieve high performance and low power dissipation.

Features

  • are access time(60, 70 or 80ns) and power consumption (Normal or Low power). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability.

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HY531000A 1Mx1, Fast Page mode www.DataSheet4U.com DESCRIPTION This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(60, 70 or 80ns) and power consumption (Normal or Low power). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability. FEATURES Ÿ Fast Page Mode operation Ÿ Read-modify-write Capability Ÿ TTL compatible inputs and outputs Ÿ /CAS-before-/RAS, /RAS-only, Hidden and Self refresh capability Ÿ Max.
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