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HY27US08561M - (HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care 1) Change TSOP1,WSOP1,FBGA package dimension 0.6 - Change TSOP1,WSOP1,FBGA mechan

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Part number HY27US08561M
Manufacturer Hynix Semiconductor
File Size 800.75 KB
Description (HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
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HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. www.DataSheet4U.com 0.0 0.1 0.2 Initial Draft Renewal Product Group Append 1.8V Operation Product to Data sheet Insert Spare Enable function for GND Pin(#6) - In case of Reading or Programming, GND Pin(#6) should be Low or High. - Change the test condition of Stand-by current-Refer to Table 13. Change CSP Package name & thickness - Name : VFBGA -> FBGA - Thickness : 1.0mm(max) -> 1.2mm(max) 1) Delete Cache Program Mode 2) Modify the description of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.
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