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HY27US081G1M - 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

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and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

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Datasheet Details

Part number HY27US081G1M
Manufacturer Hynix Semiconductor
File Size 312.09 KB
Description 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
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Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / May. 2007 1 Preliminary HY27US(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycle : Manufacturer Code - 2nd cycle : Device Code SUPPLY VOLTAGE - VCC = 2.
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