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H5MS5122DFR - Mobile DDR SDRAM 512Mbit

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and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

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www.DataSheet4U.net 512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O Specification of 512Mb (16Mx32bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Jul. 2008 1 www.DataSheet4U.net 11 Mobile DDR SDRAM 512Mbit (16M x 32bit) H5MS5122DFR Series / H5MS5132DFR Series Document Title 512MBit (4Bank x 4M x 32bits) MOBILE DDR SDRAM Revision History Revision No. 0.1 0.2 1.0 Initial Draft Update: IDD values Final Version -. Corrected max tDQSCK/tAC at DDR333 from 5.5ns to 5.0ns -. Corrected tDIPW, tIPW and tHZ at DDR400 (tDIPW: 1.8 to 1.4; tIPW: 2.7 to 2.
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