HGN036N08S
Feature
◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
P-1
80V N-Ch Power MOSFET
VDS RDS(on),typ VGS=10V ID (Sillicon Limited) ID (Package Limited)
80 3.0 131 60
V mΩ A A
DFN5x6
Drain Gate
Part Number HGN036N08S
Package Marking DFN5- 6 GN036N08S
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ TC=25℃ L=0.4m H, TC=25℃ TC=25℃
- Pin 1 S S S G
Src
Value
Unit
131 A
±20
320 m...
