HGN023NE6AL
Feature
◇ High Speed Power Switching,Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
P-1
65V N-Ch Power MOSFET
RDS(on),typ
VGS=10V
RDS(on),typ
VGS=4.5V
ID (Sillicon Limited)
ID (Package Limited)
65 V 2.1 m W 3 m W 164 A 60 A
Drain
DFN5- 6
Gate Src
Part Number HGN023NE6AL
Package Marking DFN5- 6 GN023NE6AL
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current(Silicon Limited)
Continuous Drain Current(Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ TC=25℃ L=0.1m H, TC=25℃ TC=25℃
- Absolute Maximum Ratings Parameter
Thermal...
