HGN006N03A
Feature
◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
P-1
30V N-Ch Power MOSFET
VDS RDS(on),typ ID (Sillicon Limited) ID (Package Limited)
30 V 0.55 m W 343 A 100 A
Drain
DFN5- 6
Gate Src
Part Number HGN006N03A
Package Marking DFN5- 6 GN006N03A
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current(Silicon Limited)
Continuous Drain Current(Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ TC=25℃ L=0.1m H, TC=25℃ TC=25℃
- Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Ambient Thermal Resistance...
