HGB110N10SL
Feature
◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
TO-263
100V N-Ch Power MOSFET
RDS(on),typ RDS(on),typ
TO-263 VGS=10V VGS=4.5V
RDS(on),typ RDS(on),typ
TO-220 VGS=10V VGS=4.5V
ID (Sillicon Limited)
100 V 8.7 mΩ 10.7 mΩ 9.0 mΩ 11 mΩ 73 A
TO-220
Drain Pin2
Gate Pin 1
Src
Part Number
Package Marking
Pin3
HGB110N10SL TO-263 GB110N10SL
HGP110N10SL TO-220 GP110N10SL
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Value
Unit
Continuous Drain Current (Silicon Limited)
TC=25℃ TC=100℃
73 A
Drain to Source Voltage
- 100
Gate to Source Voltage
-...
