HGB100N12S
Feature
◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
TO-263
120V N-Ch Power MOSFET
120 V
RDS(on),typ TO-263 8.3 mΩ
RDS(on),typ TO-220 8.6 mΩ
ID (Sillicon Limited)
109 A
TO-220
Drain Pin2
Gate Pin 1
Src
Part Number
Package Marking
Pin3
TO-263 GB100N12S
HGP100N12S
TO-220 GP100N12S
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ L=0.4m H, TC=25℃ TC=25℃
- Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Case Thermal Resistance...
