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CS3410BR - Silicon N-Channel Power MOSFET

General Description

avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.1Ω) l Low Gate Charge (Typical Data:20nC) l Low Reverse transfer capacitances(Typical:100PF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3410BR
Manufacturer Huajing Microelectronics
File Size 232.44 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3410BR Datasheet

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Full PDF Text Transcription (Reference)

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Silicon N-Channel Power MOSFET CS3410 BR ○R General Description： CS3410 BR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.1Ω) l Low Gate Charge (Typical Data:20nC) l Low Reverse transfer capacitances(Typical:100PF) l 100% Single Pulse avalanche energy Test Applications： Circuit of switching DC/DC converters and DC motor control.