Datasheet4U Logo Datasheet4U.com

BT50N60ANF - Silicon FS Planar IGBT

Description

Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.7V @ IC =50A and TC = 25°C l Extremely enhanced avalanche capability.

📥 Download Datasheet

Datasheet Details

Part number BT50N60ANF
Manufacturer Huajing Microelectronics
File Size 106.23 KB
Description Silicon FS Planar IGBT
Datasheet download datasheet BT50N60ANF Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BT531 26x16 channels Capacitive Touch Screen Controller ZINITIX

Other Datasheets by Huajing Microelectronics

Part Number Description

Full PDF Text Transcription

Click to expand full text
Silicon FS Planar IGBT BT50N60ANF ○R General Description： Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot TC=25℃） VCE(SAT) 600 50 312 1.7 V A W V Features： l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.
Published: |