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BT30N60ANF - Silicon FS Planar IGBT

Description

Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 30A and TC = 25°C l Extremely enhanced avalanche capability.

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Datasheet Details

Part number BT30N60ANF
Manufacturer Huajing Microelectronics
File Size 104.65 KB
Description Silicon FS Planar IGBT
Datasheet download datasheet BT30N60ANF Datasheet

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Full PDF Text Transcription

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Silicon FS Planar IGBT BT30N60ANF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot （TC=25℃） VCE(SAT) 600 30 312 2.0 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
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