HXY5N10MI
Description
The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 100V ID = 5A RDS(ON) < 98 mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
SOT23-3L
Marking 1005
G SOT23-3L
PIN1 G !
PIN2 D !
"
!" " "
! PIN3 S
N-Channel MOSFET
Qty(PCS) 3000
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
TJ,TSTG
Operating Junction and Storage Temperature Range
RθJA
Thermal Resistance,Junction-to-Ambient (Note 2)
Limit 100 ±20
5 20 1.5 -55 To 175...
