HXY3134CI
Description
The HXY3134CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 20V ID =0.8A RDS(ON) < 250mΩ@ VGS=4.5V RDS(ON) < 360mΩ@ VGS=2.5V
Application
Battery protection Load switch Uninterruptible power supply
N-Channel Enhancement Mode MOSFET
SOT-523
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N-Channel MOSFET
Package Marking and Ordering Information
Product ID
Pack
Marking
SOT-523
34 K
Qty(PCS) 3000
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Symbol
Parameter
Limit
Drain-Source Voltage
Gate-Source Voltage
±8
Drain Current-Continuous
Maximum Power Dissipation
TJ,TSTG
Operating Junction and Storage Temperature...
