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HSA6122-C9 - Low-power CMOS process manufacturing universal infrared transmitter circuit

Download the HSA6122-C9 datasheet PDF. This datasheet also covers the HSA6122-C9-HuaXinMicro variant, as both devices belong to the same low-power cmos process manufacturing universal infrared transmitter circuit family and are provided as variant models within a single manufacturer datasheet.

Description

written here and it is user’s responsibility to make wise judgment on the performance.

HuaXin Micro-electronics assumes no responsibility for the mismatch occurred.

No license is granted by implication or otherwise under any patent or patent rights of HuaXin Micro-electronics.

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Note: The manufacturer provides a single datasheet file (HSA6122-C9-HuaXinMicro-electronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSA6122-C9
Manufacturer HuaXin Micro-electronics
File Size 250.62 KB
Description Low-power CMOS process manufacturing universal infrared transmitter circuit
Datasheet download datasheet HSA6122-C9 Datasheet

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SUZHOU HUAXIN MICRO-ELECTRONICS CO.,LTD. Phone:0512-68711932 18662212989 HSA6122-C9 Ver 1.0 1. HSA6122-C9 CMOS 。 66 ， ， 144 。 2. ◆ CMOS ， ◆ ◆ ，±2% ◆ ：1.8V~4V ◆ ◆ SOP16 3. ◆ VCD、DVD ◆ ◆ ◆ ◆ 4. 4.1 4.2 S0~S10 VDD GND REM CCS1,CCS2 / I/O I/O 。， 。 （＋）； （－）； ，NMOS ； 17 Ver 1.0 SUZHOU HUAXIN MICRO-ELECTRONICS CO.,LTD. 5. (Tamb=25℃) （Vcc＝3V,） Vdd Vi Vo Pa Topr Tstg Phone:0512-68711932 18662212989 -0.3~4.0 -0.3~Vdd+0.3 -0.3~Vdd+0.3 10 -20~+80 -40~+125 V V V mW ℃ ℃ 6. (：Tamb=25℃,VDD=3V) REM Vdd Idd I OL/RE M Vdd=3V Vdd=3V, VOL/REM=0.2Vcc 1.8 3 0.5 4 1 350 V µA mA 7. 7.1 ，，， 1 。 ，IC ，，REM 。，：1 ）；2）---16 (C0~C15)； 3)---8 （D0~D7 ）；4)---8 （/D0~/D7）；5) 。 27 Ver 1.0 SUZHOU HUAXIN MICRO-ELECTRONICS CO.,LTD. 7.
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