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Military & Space Products
32K x 8 ROM—SOI
FEATURES
RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.75 µm Process (Leff = 0.6 µm) • Total Dose Hardness through 1x106 rad(SiO2) • Typical Operating Power <15 mW/MHz • Dynamic and Static Transient Upset www.DataSheet4U.com Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Neutron Hardness through 1x1014 cm-2 • SEU Immune • Latchup Free • Asynchronous Operation • CMOS or TTL Compatible I/O • Single 5 V ± 10% Power Supply OTHER • Read Cycle Times < 17 ns (Typical) ≤ 25 ns (-55 to 125°C)
HX6656
• Packaging Options - 28-Lead Flat Pack (0.500 in. x 0.720 in.) - 28-Lead DIP, MIL-STD-1835, CDIP2-T28 - 36-Lead Flat Pack (0.630 in. x 0.650 in.