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Military & Space Products
32K x 8 STATIC RAM—Low Power SOI
FEATURES
RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.55 µm Low Power Process • Total Dose Hardness through 1x106 rad(SiO2) OTHER • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C)
HLX6256
• Typical Operating Power <10 mW/MHz • Neutron Hardness through 1x1014 cm-2 • Asynchronous Operation • Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Single 3.3 V ± 0.3V Power Supply • Soft Error Rate of <1x10-10 upsets/bit-day • Latchup Free • Packaging Options - 28-Lead Flat Pack (0.500 in. x 0.720 in.) - 28-Lead DIP, MIL-STD-1835, CDIP2-T28 - 36-Lead Flat Pack (0.630 in. x 0.650 in.