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K2426 - 2SK2426

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No Secondary Breakdown.
  • Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2426 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cy.

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Full PDF Text Transcription for K2426 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2426. For precise diagrams, and layout, please refer to the original PDF.

2SK2426 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown ...

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e • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2426 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.