Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings
Outline
DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
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2SK2334(L), 2SK2334(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diod.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2334. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High spee...
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speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4U.com 2SK2334(L), 2SK2334(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1 %
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K2334 Datasheet
