Download K1918 Datasheet PDF
Hitachi Semiconductor
K1918
Features - Low on-resistance - High speed switching - Low drive current - 4 V gate drive device can be driven from 5 V source - Suitable for Switching regulator, DC - DC converter - Avalanche ratings Outline LDPAK 123 D 12 3 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK1918(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I - 1 D(pulse) IDR IAP- 3 EAR- 3 Pch- 2 Tch Tstg Ratings 60 ±20 25 100 25 25 53 50 150 - 55 to +150 Unit V V A A A A m J W °C °C 2SK1918(L), 2SK1918(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown...