4 V gate drive device can be driven from 5 V source.
Suitable for Switching regulator, DC - DC converter.
Avalanche ratings
Outline
LDPAK
4
4
123 D
12 3
G S
1. Gate 2. Drain 3. Source 4. Drain
November 1996
2SK1918(L), 2SK1918(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode re.
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K1918. For precise diagrams, and layout, please refer to the original PDF.
2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate...
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ow on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter • Avalanche ratings Outline LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain November 1996 2SK1918(L), 2SK1918(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤1 % 2. Value at Tc = 25 °C 3.
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K1918 Datasheet
