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HM5118165 - 16M EDO DRAM

General Description

The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit.

It employs the most advanced 0.5 µm CMOS technology for high performance and low power.

The HM5118165 offers Extended Data Out (EDO) Page Mode as a high speed access mode.

Key Features

  • Single 5 V (±10%).
  • Access time : 50 ns/60 ns/70 ns (max).
  • Power dissipation  Active mode : 1045 mW/935 mW/825 mW (max)  Standby mode : 11 mW (max) : 0.83 mW (max) (L-version).
  • EDO page mode capability.
  • Refresh cycles  1024 refresh cycles : 16 ms : 128 ms (L-version).
  • 4 variations of refresh  RAS -only refresh  CAS -before-RAS refresh  Hidden refresh  Self refresh (L-version).
  • 2CAS -byte control.
  • Battery backup operat.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HM5118165A 1M x 16-Bit DRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM5118165 Series 16 M EDO DRAM (1-Mword × 16-bit) 1 k Refresh ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers Extended Data Out (EDO) Page Mode as a high speed access mode. It is packaged in 42-pin plastic SOJ and 50-pin plastic TSOP II. Features • Single 5 V (±10%) • Access time : 50 ns/60 ns/70 ns (max) • Power dissipation  Active mode : 1045 mW/935 mW/825 mW (max)  Standby mode : 11 mW (max) : 0.