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D1126. For precise diagrams, and layout, please refer to the original PDF.
2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 1. Base 2. Collector (Flange) 3. Emitter 2 1 ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 2SD112...
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Collector (Flange) 3. Emitter 2 1 ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C.
More Datasheets from Hitachi Semiconductor (now Renesas)
D1126 Datasheet
