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2SC3322 - Silicon NPN Triple Diffused Transistor

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2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) IB PC* Tj Tstg 1 Ratings 900 800 7 5 10 2.5 80 150 –55 to +150 Unit V V V A A A W °C °C Free Datasheet http://www.datasheet4u.com/ 2SC3322 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 800 800 Typ — — Max — — Unit V V Test conditions IC = 0.