Datasheet4U Logo Datasheet4U.com

PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone

Features

  • Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement.
  • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Ts.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PF0010 High Frequency Power MOS FET Module Renesas Technology
PF0027 MOS FET Power Amplifier Module Renesas Technology
PF0031 MOS FET Power Amplifier Module Hitachi
PF0100 14-channel configurable power management NXP
PF0100Z 14-channel configurable power management NXP

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
PF0030 MOS FET Power Amplifier
PF0032 MOS FET Power Amplifier
PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone
PF01410A MOS FET Power Amplifier Module for GSM Handy Phone
PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone

Full PDF Text Transcription

Click to expand full text
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4.6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 1 4.
Published: |