4 V gate drive device can be driven from 5 V source
Outline
TO-3P
ADE-208-359 D 5th. Edition
D
G1 2 3 1. Gate 2. Drain (Flange)
S 3. Source
2SK2554
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2554. For precise diagrams, and layout, please refer to the original PDF.
2SK2554 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive devi...
View more extracted text
e • RDS(on) = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-3P ADE-208-359 D 5th. Edition D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2554 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
More Datasheets from Hitachi Semiconductor (now Renesas)
K2554 Datasheet
