Download the K2115 datasheet PDF.
This datasheet also covers the K2114 variant, as both devices belong to the same 2sk2115 family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low on-resistance.
High speed switching.
Low drive current.
No secondary breakdown.
Suitable for Switching regulator
Outline
TO-220CFM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SK2114, 2SK2115
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK2114
2SK2115
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. P.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K2115. For precise diagrams, and layout, please refer to the original PDF.
2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary b...
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resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
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K2115 Datasheet
