Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
http://www. Datasheet4U. com
2SK1401, 2SK1401A
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Cha.
Full PDF Text Transcription for K1401A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1401A. For precise diagrams, and layout, please refer to the original PDF.
2SK1401, 2SK1401A Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondar...
View more extracted text
• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S http://www.Datasheet4U.com 2SK1401, 2SK1401A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
More Datasheets from Hitachi Semiconductor (now Renesas)
K1401A Datasheet
