Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SJ291
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
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2SJ291
Silicon P-Channel MOS FET
November 1996
www.DataSheet4U.com
Application
High speed power switching
Features
• • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SJ291
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
www.DataSheet4U.com Avalanche current
Symbol VDSS VGSS ID ID(pulse)* IDR IAP*
3 1
Ratings –60 ±20 –20 –80 –20 –20
Unit V V A A A A mJ W °C °C
Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
J291 Datasheet
