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HVM187S - Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Features

  • Low forward resistance. (rf = 5.5 max).
  • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM187S Laser Mark H3 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HVM187S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Per one device Symbol VR IF Pd.
  • Tj Tstg Value 60 50 10.

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Full PDF Text Transcription

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HVM187S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-055C (Z) Rev. 3 Jun. 1993 Features • Low forward resistance. (rf = 5.5 max) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM187S Laser Mark H3 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HVM187S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Per one device Symbol VR IF Pd* Tj Tstg Value 60 50 100 125 –55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol VF IR C rf — Min — — — 3.
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