Datasheet4U Logo Datasheet4U.com

HVD359 - Variable Capacitance Diode

Features

  • High capacitance ratio and good C-V linearity.
  • To be usable at low voltage.
  • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD359 Laser Mark G Package Code SFP Outline Cathode mark Mark 1 G 2 1. Cathode 2. Anode HVD359 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125.
  • 55 to +125 Unit V °C °C Electrical Characteristics (Ta.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HVD359 Variable Capacitance Diode Renesas
HVD350B Variable Capacitance Diode Renesas Technology
HVD350B Variable Capacitance Diode Renesas
HVD316 Variable Capacitance Diode Renesas Technology
HVD328C Variable Capacitance Diode Renesas

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HVD355B Variable Capacitance Diode
HVD369B Variable Capacitance Diode
HVD380B Variable Capacitance Diode
HVD131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching
HVD132 Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com HVD359 Variable Capacitance Diode for VCXO ADE-208-955 (Z) Rev. 0 Jul. 2000 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD359 Laser Mark G Package Code SFP Outline Cathode mark Mark 1 G 2 1. Cathode 2. Anode HVD359 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 −55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol IR1 IR2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability * 1 Min   24.8 6.0 3.0  80 Typ        Max 10 100 29.8 8.3  1.
Published: |