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HSM276ASR - Silicon Schottky Barrier Diode

Features

  • High forward current, Low capacitance.
  • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use.
  • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276ASR Laser Mark S20 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 HSM276ASR Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Averag.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HSM276AS Silicon Schottky Barrier Diode
HSM276S Silicon Schottky Barrier Diode
HSM276SR Silicon Schottky Barrier Diode
HSM221C Silicon Epitaxial Planar Diode
HSM2692 Silicon Epitaxial Planar Diode

Full PDF Text Transcription

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HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-840(Z) Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • HSM276ASR which is interconnected in series configuration is designed for balanced mixer use. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.
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