Datasheet4U Logo Datasheet4U.com

HRC0203B - Silicon Schottky Barrier Diode

Features

  • Low forward voltage drop and suitable for high effifiency rectifying.
  • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HRC0203B Laser Mark S2 Package Code UFP Outline Cathode mark Mark 1 S2 2 1. Cathode 2. Anode HRC0203B Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRRM I o.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HRC0203C Silicon Schottky Barrier Diode Renesas Technology
HRC0202A Silicon Schottky Barrier Diode Renesas Technology
HRC0103C Silicon Schottky Barrier Diode Renesas

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HRC0103A Silicon Schottky Barrier Diode

Full PDF Text Transcription

Click to expand full text
HRC0203B Silicon Schottky Barrier Diode for Rectifying ADE-208-800(Z) Rev 0 June. 1999 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HRC0203B Laser Mark S2 Package Code UFP Outline Cathode mark Mark 1 S2 2 1. Cathode 2. Anode HRC0203B Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRRM I o*1 *1 Value 30 200 Unit V mA A °C °C IFSM Tj *2 3 125 -55Å`+125 Tstg 1. See from Fig.3 to Fig.5 2.
Published: |