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HM62V8512C - 4 M SRAM (512-kword x 8-bit)

General Description

The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit.

It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Key Features

  • Single 3.0 V supply: 2.7 V to 3.6 V.
  • Access time: 55/70 ns (max).
  • Power dissipation  Active: 6.0 mW/MHz (typ)  Standby: 2.4 µW (typ).
  • Completely static memory. No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output: Three state output.
  • Directly LV-TTL compatible: All inputs.
  • Battery backup operation HM62V8512C Series Ordering Information Type No. HM62V8512CLFP-5 HM62V8512CLFP-7 HM6.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HM62V8512CI Wide Temperature Range Version4 M SRAM (512-kword x 8-bit)
HM62V8512B 4 M SRAM (512-kword x 8-bit)
HM62V16100I Wide Temperature Range Version
HM62V16256B 4 M SRAM (256-kword x 16-bit)
HM62V16256C 4 M SRAM (256-kword x 16-bit)
HM62V16256CI Wide Temperature Range Version4 M SRAM (256-kword x 16-bit)
HM62V16258B 4 M SRAM (256-kword x 16-bit)
HM6208H High Speed CMOS Static RAM
HM621400H 4M High Speed SRAM (4-Mword x 1-bit)
HM621400HC 4M High Speed SRAM (4-Mword x 1-bit)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM62V8512C Series 4 M SRAM (512-kword × 8-bit) ADE-203-1210A (Z) Rev. 1.0 Jan. 31, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62V8512C is suitable for battery backup system. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Access time: 55/70 ns (max) • Power dissipation  Active: 6.0 mW/MHz (typ)  Standby: 2.4 µW (typ) • Completely static memory.